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| inchange semiconductor product specification silicon pnp power transistors bd534/536/538 description ? ? with to-220c package ? complement to type bd533/535/537 ? low saturation voltage applications ? for medium power linear and switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit bd534 -45 bd536 -60 v cbo collector-base voltage BD538 open emitter- -80 v bd534 -45 bd536 -60 v ceo collector-emitter voltage BD538 open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -8 a i e emitter current -8 a i b base current -1 a p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors bd534/536/538 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat-1 collector-emitter saturation voltage i c =-2 a;i b =-0.2 a -0.8 v v cesat-2 collector-emitter saturation voltage i c =-6 a;i b =-0.6 a -0.8 v v be base-emitter on voltage i c =-2a ; v ce =-2v -1.5 v bd534 v cb =-45v; i e =0 bd536 v cb =-60v; i e =0 i cbo collector cut-off current BD538 v cb =-80v; i e =0 -0.1 ma bd534 v ce =-45v; v be =0 bd536 v ce =-60v; v be =0 i ces collector cut-off current BD538 v ce =-80v; v be =0 -0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 -1 ma bd534/536 20 h fe-1 dc current gain BD538 i c =-10ma ; v ce =-5v 15 h fe-2 dc current gain i c =-0.5a ; v ce =-2v 40 group: j 30 75 h fe-3 dc current gain (all device) group: k i c =-2a ; v ce =-2v 40 100 group: j 15 h fe-4 dc current gain (all device) group: k i c =-3a ; v ce =-2v 20 f t transition frequency i c =-0.5a ; v ce =-1v 3 12 mhz inchange semiconductor product specification 3 silicon pnp power transistors bd534/536/538 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
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